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this is information on a product in full production. september 2016 docid024664 rev 4 1/15 stf6n80k5, STFI6N80K5 n-channel 800 v, 1.3 ? typ., 4.5 a mdmesh? k5 power mosfets in to-220fp and i2pakfp packages datasheet - production data figure 1. internal schematic diagram features ? industry?s lowest r ds(on) ? industry?s best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these very high voltage n-channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. d(2) g(1) s(3) am01476v1 to-220fp 1 2 3 1 2 3 i pakfp 2 order code v ds r ds(on) max i d p tot stf6n80k5 800 v 1.6 ? 4.5 a 25 w STFI6N80K5 table 1. device summary order code marking package packing stf6n80k5 6n80k5 to-220fp tube STFI6N80K5 i 2 pakfp www.st.com
contents stf6n80k5, STFI6N80K5 2/15 docid024664 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 to-220fp package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 i 2 pakfp (to-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid024664 rev 4 3/15 stf6n80k5, STFI6N80K5 electrical ratings 15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 4.5 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 2.8 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 18 a p tot total dissipation at t c = 25 c 25 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 1.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 85 mj dv/dt (3) 3. i sd 4.5 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 640 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 2500 v t j operating junction temperature range -55 to 150 c t stg storage temperature range table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 5 c/w r thj-amb thermal resistance junction-amb 62.5
electrical characteristics stf6n80k5, STFI6N80K5 4/15 docid024664 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v 1 a v ds = 800 v, t j = 125 c (1) 1. defined by design, not subject to production test . 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2 a 1.3 1.6 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 270 - pf c oss output capacitance - 25 - pf c rss reverse transfer capacitance -0.7- pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = from 0 to 640 v -38-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -16-pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 7.5 - ? q g total gate charge v dd = 640 v, i d = 4.5 a v gs = 10 v (see figure 15: gate charge test circuit ) -13-nc q gs gate-source charge - 2.1 - nc q gd gate-drain charge - 9.6 - nc
docid024664 rev 4 5/15 stf6n80k5, STFI6N80K5 electrical characteristics 15 the built-in back-to-back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 2.25 a, r g = 4.7 ? , v gs = 10 v (see figure 14: switching times test circuit for resistive load and figure 19: switching time waveform ) -16- ns t r rise time - 7.5 - ns t d(off) turn-off delay time - 28.5 - ns t f fall time - 16 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 18 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 4.5 a, v dd = 60 v di/dt = 100 a/s, (see figure 16: test circuit for inductive load switching and diode recovery times ) - 280 ns q rr reverse recovery charge - 2.2 c i rrm reverse recovery current - 15.5 a t rr reverse recovery time i sd = 4.5 a,v dd = 60 v di/dt = 100 a/s, tj = 150 c (see figure 16: test circuit for inductive load switching and diode recovery times ) - 450 ns q rr reverse recovery charge - 3.15 c i rrm reverse recovery current - 14 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d = 0 30 - - v
electrical characteristics stf6n80k5, STFI6N80K5 6/15 docid024664 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance *,3'59 , ' 9 '6 9 $ w s ?v w s pv w s pv ?$ 7f ?& 7m vlqjohsxovh ?& rshudwlqjlqwklvduhd lvolplwhge\5 '6rq / . w s v / 6lqjohsxovh *& i d 0 0 4 v ds (v) 8 (a) 12 8 6v 7v v gs =10, 11, 12v 2 4 6 8v 9v 16 am18115v1 i d 6 4 2 0 6 v gs (v) 8 (a) 5 7 9 8 v ds =20v 10 11 am18116v1 v gs 6 4 2 0 0 4 q g (nc) (v) 8 6 8 10 v dd =640v i d =4.5a 12 300 200 100 0 400 500 v ds 2 10 v ds (v) 12 600 am18117v1 *,3*07 5 '6rq , ' $ : 9 *6 9
docid024664 rev 4 7/15 stf6n80k5, STFI6N80K5 electrical characteristics 15 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v (br)dss vs temperature figure 13. source-drain diode forward characteristics c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 f = 1 mhz am18119v1 e oss 2 1 0 0 v ds (v) (j) 400 200 3 600 4 am18120v1 1.1 0.8 0.6 0.4 t j (c) 0.5 0.7 0.9 1 1.2 -100 0 -50 100 50 150 v gs(th) (norm) am18082v2 i d =100 a 1.5 1 0.5 0 -100 0 t j (c) -50 2 100 50 150 i d =2 a 2.5 v gs =10 v r ds(on) (norm) am18081v2 v (br)dss -100 0 t j (c) (norm) -50 50 100 0.85 0.9 0.95 1 1.05 1.1 i d =1ma am18083v1 v sd 1 3 i sd (a) (v) 2 4 0.55 0.65 0.75 0.85 t j =-50c t j =150c t j =25c 0.95 am18121v1
test circuits stf6n80k5, STFI6N80K5 8/15 docid024664 rev 4 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024664 rev 4 9/15 stf6n80k5, STFI6N80K5 package information 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information stf6n80k5, STFI6N80K5 10/15 docid024664 rev 4 4.1 to-220fp package information figure 20. to-220fp package outline 7012510_rev_k_b
docid024664 rev 4 11/15 stf6n80k5, STFI6N80K5 package information 15 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package information stf6n80k5, STFI6N80K5 12/15 docid024664 rev 4 4.2 i 2 pakfp (to-281) package information figure 21. i 2 pakfp (to-281) package outline uhy&
docid024664 rev 4 13/15 stf6n80k5, STFI6N80K5 package information 15 table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.50 7.60 7.70
revision history stf6n80k5, STFI6N80K5 14/15 docid024664 rev 4 5 revision history table 11. document revision history date revision changes 28-may-2013 1 first release. 05-mar-2014 2 ? datasheet status promoted from preliminary data to production data ? added: i 2 pakfp package ? modified: e as value in table 2 ? added: mosfet dv/dt ruggedness test condition and note 4 in table 2 ? modified: r g value in table 5 ? modified: the entire typical values in table 5, 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? minor text changes 05-dec-2014 3 updated title, features and description in cover page. updated section 2.1: electrical characteristics (curves) and section 4: package information . minor text changes. 06-sept-2016 4 updated table 2: absolute maximum ratings , tab le 4 : on/off states , ta ble 5: dyn amic , table 6: switching times , and table 7: source drain diode . updated figure 2: safe operating area and figure 3: thermal impedance . minor text changes.
docid024664 rev 4 15/15 stf6n80k5, STFI6N80K5 15 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics ? all rights reserved

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